收藏本站
MRF7S21170HR3 MRF7S21170HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used
in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
1400 mA, Pout
= 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output
Power
?
Pout
@ 1 dB Compression Point
?
170 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Optimized for Doherty Applications
?
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
?C
Case Operating Temperature
TC
150
?C
Operating Junction Temperature
(1,2)
TJ
225
?C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80?C, 170 W CW
Case Temperature 73?C, 25 W CW
R?JC
0.31
0.36
?C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF7S21170H
Rev. 7, 2/2012
Freescale Semiconductor
Technical Data
MRF7S21170HR3
MRF7S21170HSR3
2110--2170 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--03
NI--880S
MRF7S21170HSR3
CASE 465B--04
NI--880
MRF7S21170HR3
?
Freescale Semiconductor, Inc., 2006--2008, 2011--2012.
All rights reserved.
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MRF7S21210HSR5 MOSFET RF N-CH 63W NI-780S
MRF7S27130HSR5 MOSFET RF N-CH 23W NI-780S
MRF7S35015HSR5 MOSFET RF N-CH 15W NI-400S-240
MRF7S35120HSR5 MOSFET RF N-CH 120W NI-780S
MRF7S38010HSR5 MOSFET RF N-CH 2W 30V NI-400S
MRF7S38040HSR5 MOSFET RF N-CH 8W 30V NI-400S
MRF7S38075HSR5 MOSFET RF N-CH 12W 30V NI-780S
MRF8P18265HSR6 FET RF N-CH 1840MHZ 30V NI1230S8
相关代理商/技术参数
MRF7S21170HS 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF7S21170HSR3 功能描述:射频MOSFET电源晶体管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21170HSR5 功能描述:射频MOSFET电源晶体管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HSR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S27130HR3 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray